| PART |
Description |
Maker |
| IS42S16100C1-6T IS42S16100C1-6TL |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solu...
|
| IS42S16100C1-7B IS42S16100C1-7BI IS42S16100C1-7BL |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS42S16100 IS42S16100-7T |
512K Words x 16 Bits x 2 Banks (16-MBIT)
SYNCHRONOUS DYNAMIC RAM
|
ICS
|
| IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42 |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
|
| IS42S16100C1-6T IS42S16100C1-5T IS42S16100C1-5TL I |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Integrated Silicon Solution, Inc.
天津新技术产业园区管理委员会
|
| LC382161T-17 |
2 MEG(65536 words x 16 bits x 2 banks) Synchronous DRAM
|
Sanyo Semicon Device
|
| IS42S32800B-7T IS42S32800B-6T IS42S32800B-6BI IS42 |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
| IS42S32800B-6B IS42S32800B-6BLI IS42S32800B-6T IS4 |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| EDS2532AABJ-75-E EDS2532AABJ-75L-E |
256M bits SDRAM (8M words 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位）
256M bits SDRAM (8M words ?32 bits)
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| K4C89323AF-GCF5 K4C89323AF-GCF6 K4C89323AF-GCFB K4 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
|
Samsung semiconductor
|
| W9816G6CB W9816G6CB-6 W9816G6CB-7 |
512K 】 2 BANKS 】 16 BITS SDRAM
|
Winbond
|
